advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -40v simple drive requirement r ds(on) 12.3m fast switching characteristic i d -60a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance junction-case 1.8 /w rthj-a 62.5 /w data and specifications subject to change without notice maximum thermal resistance, junction-ambient (pcb mount) 3 200901221 1 AP6677GH rating -40 + 20 -60 rohs-compliant product continuous drain current, v gs @ 10v -38 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 pulsed drain current 1 -240 thermal data -55 to 150 69 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s to-252(h) free datasheet http:///
AP6677GH electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 12.3 m ? v gs =-4.5v, i d =-20a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 46 - s i dss drain-source leakage current v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-30a - 44 70 nc q gs gate-source charge v ds =-32v - 6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 28 - nc t d(on) turn-on delay time 2 v ds =-20v - 11 - ns t r rise time i d =-30a - 60 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 60 - ns t f fall time r d =0.67 - 120 - ns c iss input capacitance v gs =0v - 3160 5050 pf c oss output capacitance v ds =-25v - 560 - pf c rss reverse transfer capacitance f=1.0mhz - 380 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-30a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-10a, v gs =0v, - 42 - ns q rr reverse recovery charge di/dt=-100a/s - 46 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2 free datasheet http:///
AP6677GH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0 v -6.0 v -5.0 v v g = - 4.0 v 0 20 40 60 80 100 120 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v g = - 4.0 v t c =150 o c 8 10 12 14 16 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 : 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-30a v g =-10v 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c free datasheet http:///
AP6677GH fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 1020304050607080 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds =-32v i d =-30a 0 1000 2000 3000 4000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse free datasheet http:///
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 laser marking symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 6677gh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement for low voltage mosfet only e3 5 free datasheet http:///
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